MJE243: 4.0 A, 100 V NPN Bipolar Power Transistor
The Bipolar Power Transistor is designed for low power audio amplifier and low current, high speed switching applications.
技术特性
- High Collector-Emitter Sustaining Voltage -
VCEO(sus) = 100 Vdc (Min) MJE243, MJE253
- High DC Current Gain @ IC = 200 mAdc
hFE = 40-200
hFE = 40-120 - MJE243, MJE253
- Low Collector-Emitter Saturation Voltage -
VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc
- High Current Gain Bandwidth Product -
fT = 40 MHz (Min) @ IC = 100 mAdc
- Annular Construction for Low Leakages
ICBO = 100 nAdc (Max) @ Rated VCB
- Pb-Free Packages are Available
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封装图 MARKING DIAGRAM
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订购信息 Ordering Information
| 产品 |
状况 |
Compliance |
具体说明 |
封装 |
MSL* |
容器 |
预算价格 (1千个数量的单价） |
| 类型 |
外形 |
类型 |
数量 |
| MJE243G |
Active |
|
4.0 A, 100 V NPN Bipolar Power Transistor |
TO-225-3 |
77-09 |
|
Bulk Box |
500 |
$0.2533 |
| MJE243 |
Last Shipments |
|
4.0 A, 100 V NPN Bipolar Power Transistor |
TO-225-3 |
77-09 |
|
Bulk Box |
500 |
|
数据资料DataSheet下载
