MJF31C:NPN Bipolar Power Transistor
The Bipolar Power Transistor is designed for general purpose amplifier and switching applications. The MJF31C (NPN) and MJF32C (PNP) are complementary devices.
技术特性
- Collector–Emitter Saturation Voltage –VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc
- Collector–Emitter Sustaining Voltage – VCEO(sus) = 100 Vdc (Min)
- High Current Gain – Bandwidth Product fT = 3.0 MHz (Min) @ IC = 500 mAdc
- UL Recognized, File #E69369, to 3500 VRMS Isolation
- Pb-Free Packages are Available
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封装图 PACKAGE DIMENSIONS
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订购信息 Ordering Information
| 产品 |
状况 |
Compliance |
具体说明 |
封装 |
MSL* |
容器 |
预算价格 (1千个数量的单价） |
| 类型 |
外形 |
类型 |
数量 |
| MJF31CG |
Active |
|
NPN Bipolar Power Transistor |
TO-220 FULLPAK-3 |
221D-03 |
|
Tube |
50 |
$0.516 |
| MJF31C |
Last Shipments |
|
NPN Bipolar Power Transistor |
TO-220 FULLPAK-3 |
221D-03 |
|
Tube |
50 |
|
数据资料DataSheet下载
