MMJT350T1:PNP Bipolar Power Transistor
The Bipolar Power Transistor is designed for use in line-operated applications such as low power, line-operated series pass and switching regulators requiring PNP capability.
技术特性
- High Collector-Emitter Sustaining Voltage- VCEO(sus) = 300 Vdc @ IC = 1.0 mAdc
- Excellent DC Current Gain - hFE = 30–240 @ IC = 50 mAdc
- AECQ101 Qualified and PPAP Capable
- S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements
- These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant
|
封装图 PACKAGE DIMENSIONS
|
订购信息 Ordering Information
| 产品 |
状况 |
Compliance |
具体说明 |
封装 |
MSL* |
容器 |
预算价格 (1千个数量的单价） |
| 类型 |
外形 |
类型 |
数量 |
| MMJT350T1G |
Active |
| AEC Qualified |
| Pb-free |
| Halide free |
|
PNP Bipolar Power Transistor |
SOT-223-4 / TO-261-4 |
318E-04 |
1 |
Tape and Reel |
1000 |
$0.2 |
| SMMJT350T1G |
Active |
| AEC Qualified |
| PPAP Capable |
| Pb-free |
| Halide free |
|
PNP Bipolar Power Transistor |
SOT-223-4 / TO-261-4 |
318E-04 |
1 |
Tape and Reel |
1000 |
$0.224 |
数据资料DataSheet下载
