MSD42:NPN Silicon General Purpose High Voltage Transistor

This NPN Bipolar Amplifier Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications.

技术特性
  • High hFE, 210-460
  • Low VCE(sat), < 0.5 V
  • Available in 8 mm, 7-inch/3000 Unit Tape and Reel
  • Moisture Sensitivity Level 1
  • ESD Protection: Human Body Model > 4000 V ESD Protection: Machine Model > 400 V
  • Pb-Free Package is Available
  • AEC-Q101 Qualified and PPAP Capable
  • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements
封装图 PACKAGE DIMENSIONS

MSD42封装图

订购信息 Ordering Information
产品 状况 Compliance 具体说明 封装 MSL* 容器 预算价格 (1千个数量的单价)
类型 外形 类型 数量
MSD42T1G Active
AEC Qualified
Pb-free
Halide free
NPN Silicon General Purpose High Voltage Transistor SC-59-3 318D-04 1 Tape and Reel 3000 $0.072
数据资料DataSheet下载
概述 文档编号/大小 版本
NPN Silicon General Purpose High Voltage Transistor MSD42-D(417.0kB) 3