MTB2P50E:Power MOSFET 500V 2A 6 Ohm Single P-Channel D2PAK
The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on) capabilities. This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
技术特性
- Robust High Voltage Termination
- Avalanche Energy Specified
- Source−to−Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
- Diode is Characterized for Use in Bridge Circuits
- IDSS and VDS(on)Specified at Elevated Temperature
- Short Heatsink Tab Manufactured — Not Sheared
- Specially Designed Leadframe for Maximum Power Dissipation
- Pb−Free Package is Available
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封装图 PACKAGE DIMENSIONS
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订购信息 Ordering Information
| 产品 |
状况 |
Compliance |
具体说明 |
封装 |
MSL* |
容器 |
预算价格 (1千个数量的单价） |
| 类型 |
外形 |
类型 |
数量 |
| MTB2P50ET4G |
Active |
|
Power MOSFET 500V 2A 6 Ohm Single P-Channel D2PAK |
D2PAK-3 |
418B-04 |
1 |
Tape and Reel |
800 |
$1.3333 |
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