MTD6N15:Power MOSFET 150V 6A 300 mOhm Single N-Channel DPAK
This Power FET is designed for high speed, low loss power switching applications such as switching regulators, converters, solenoid and relay drivers.
技术特性
- Silicon Gate for Fast Switching Speeds
- Low RDS(on)
— 0.3 Max
- Rugged — SOA is Power Dissipation Limited
- Source−to−Drain Diode Characterized for Use With Inductive Loads
- Low Drive Requirement — VGS(th)
= 4.0 V Max
- Surface Mount Package on 16 mm Tape
- Pb−Free Package is Available
|
封装图 PACKAGE DIMENSIONS
|
订购信息 Ordering Information
| 产品 |
状况 |
Compliance |
具体说明 |
封装 |
MSL* |
容器 |
预算价格 (1千个数量的单价） |
| 类型 |
外形 |
类型 |
数量 |
| MTD6N15T4G |
Active |
|
Power MOSFET 150V 6A 300 mOhm Single N-Channel DPAK |
DPAK-3 |
369C |
1 |
Tape and Reel |
2500 |
$0.4779 |
| MTD6N15T4 |
Last Shipments |
|
Power MOSFET 150V 6A 300 mOhm Single N-Channel DPAK |
DPAK-3 |
369C |
1 |
Tape and Reel |
2500 |
|
数据资料DataSheet下载
