MTD6N20E:Power MOSFET 200V 6A 700 mOhm Single N-Channel DPAK
This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
技术特性
- Avalanche Energy Specified
- Source−to−Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
- Diode is Characterized for Use in Bridge Circuits
- IDSS and VDS(on)
Specified at Elevated Temperature
- These Devices are Pb−Free and are RoHS Compliant
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封装图 PACKAGE DIMENSIONS
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订购信息 Ordering Information
| 产品 |
状况 |
Compliance |
具体说明 |
封装 |
MSL* |
容器 |
预算价格 (1千个数量的单价） |
| 类型 |
外形 |
类型 |
数量 |
| MTD6N20ET4G |
Active |
|
Power MOSFET 200V 6A 700 mOhm Single N-Channel DPAK |
DPAK-3 |
369C |
1 |
Tape and Reel |
2500 |
$0.4025 |
| MTD6N20ET4 |
Last Shipments |
|
Power MOSFET 200V 6A 700 mOhm Single N-Channel DPAK |
DPAK-3 |
369C |
1 |
Tape and Reel |
2500 |
|
数据资料DataSheet下载
