NDD02N60Z:Power MOSFET 600V 2.2A 4.8 Ohm Single N-Channel DPAK/IPAK
Power MOSFET 600V 4.8 Ohm Single N-Channel
技术特性
- Low ON Resistance
- Low Gate Charge
- ESD Diode−Protected Gate
- 100% Avalanche Tested
- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
应用
- Adapter (Notebook, Printer, Gaming)
- LCD Panel Power
- Lighting Ballasts
终端产品
优势
- Improves efficiency
- Faster turn-on
- ESD resistance
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封装图 PACKAGE DIMENSIONS
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订购信息 Ordering Information
| 产品 |
状况 |
Compliance |
具体说明 |
封装 |
MSL* |
容器 |
预算价格 (1千个数量的单价） |
| 类型 |
外形 |
类型 |
数量 |
| NDD02N60Z-1G |
Active |
|
Power MOSFET 600V 2.2A 4.8 Ohm Single N-Channel DPAK/IPAK |
IPAK-4 |
369D |
1 |
Tube |
75 |
$0.26 |
| NDD02N60ZT4G |
Active |
|
Power MOSFET 600V 2.2A 4.8 Ohm Single N-Channel DPAK/IPAK |
DPAK-3 |
369AA |
1 |
Tape and Reel |
2500 |
$0.26 |
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