NGB8207AB: Ignition IGBT, N-Channel, 20 A, 365 V
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil driver applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.
技术特性
- Ideal for Coil−on−Plug and Driver−on−Coil Applications
- Gate−Emitter ESD Protection
- Temperature Compensated Gate−Collector Voltage Clamp Limits
Stress Applied to Load
- Integrated ESD Diode Protection
- Low Threshold Voltage for Interfacing Power Loads to Logic or
Microprocessor Devices
- Low Saturation Voltage
- High Pulsed Current Capability
- Minimum Avalanche Energy − 500 mJ
- Gate Resistor (RG) = 70
- This is a Pb−Free Device
终端产品
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应用
封装图 PACKAGE DIMENSIONS
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订购信息 Ordering Information
| 产品 |
状况 |
Compliance |
具体说明 |
封装 |
MSL* |
容器 |
预算价格 (1千个数量的单价） |
| 类型 |
外形 |
类型 |
数量 |
| NGB8207ABNT4G |
Active |
| AEC Qualified |
| PPAP Capable |
| Pb-free |
| Halide free |
|
Ignition IGBT, N-Channel, 20 A, 365 V |
D2PAK-3 |
418B-04 |
1 |
Tape and Reel |
800 |
$1.1333 |
数据资料DataSheet下载
