NGD18N40A:Ignition IGBT, N-Channel, 18 A, 400 V
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. This device is a significant enhancement to the standard DPAK ignition IGBT device, NGD15N41CLT4. This device offers higher Unclamped Inductive Switching (UIS) energy and lower Collector-Emitter Saturation Voltage, Vce(on).
技术特性
- Ideal for Coil−on−Plug Applications
- DPAK Package Offers Smaller Footprint for Increased Board Space
- Gate−Emitter ESD Protection
- Temperature Compensated Gate−Collector Voltage Clamp Limits
Stress Applied to Load
- Integrated ESD Diode Protection
- New Design Increases Unclamped Inductive Switching (UIS) Energy
Per Area
- Low Threshold Voltage Interfaces Power Loads to Logic or
Microprocessor Devices
- Low Saturation Voltage
- High Pulsed Current Capability
- Optional Gate Resistor (RG) and Gate−Emitter Resistor (RGE)
- Emitter Ballasting for Short−Circuit Capability
- These are Pb−Free Devices
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应用
终端产品
封装图 PACKAGE DIMENSIONS
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订购信息 Ordering Information
| 产品 |
状况 |
Compliance |
具体说明 |
封装 |
MSL* |
容器 |
预算价格 (1千个数量的单价） |
| 类型 |
外形 |
类型 |
数量 |
| NGD18N40ACLBT4G |
Active |
| AEC Qualified |
| PPAP Capable |
| Pb-free |
| Halide free |
|
Ignition IGBT, N-Channel, 18 A, 400 V |
DPAK-3 |
369C |
1 |
Tape and Reel |
2500 |
$0.9333 |
数据资料DataSheet下载
