NGD18N45:Ignition IGBT 18A,450V
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.
技术特性
- Ideal for Coil−on−Plug Applications
- DPAK Package Offers Smaller Footprint for Increased Board Space
- Gate−Emitter ESD Protection
- Temperature Compensated Gate−Collector Voltage Clamp Limits Stress Applied to Load
- Low Threshold Voltage Interfaces Power Loads to Logic or
Microprocessor Devices
- Low Saturation Voltage
- High Pulsed Current Capability
- Emitter Ballasting for Short−Circuit Capability
- This is a Pb−Free Device
应用
|
终端产品
封装图 PACKAGE DIMENSIONS
|
订购信息 Ordering Information
| 产品 |
状况 |
Compliance |
具体说明 |
封装 |
MSL* |
容器 |
预算价格 (1千个数量的单价） |
| 类型 |
外形 |
类型 |
数量 |
| NGD18N45CLBT4G |
Active |
| AEC Qualified |
| PPAP Capable |
| Pb-free |
| Halide free |
|
Ignition IGBT 18A,450V |
DPAK-3 |
369C |
3 |
Tape and Reel |
2500 |
$0.6933 |
数据资料DataSheet下载
