NGD8205A:Ignition IGBT, N-Channel, 20 A, 350 V
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil driver applications. Primary uses include Ignition, Direct Fuel Injections, or wherever high voltage and high current switching is required.
技术特性
- Ideal for Coil−on−Plug and Driver−on−Coil Applications
- DPAK Package Offers Smaller Footprint for Increased Board Space
- Gate−Emitter ESD Protection
- • Temperature Compensated Gate−Collector Voltage Clamp Limits
Stress Applied to Load
- Integrated ESD Diode Protection
- Low Threshold Voltage for Interfacing Power Loads to Logic or
Microprocessor Devices
- Low Saturation Voltage
- High Pulsed Current Capability
- Optional Gate Resistor (RG) and Gate−Emitter Resistor (RGE)
- These are Pb−Free Devices
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终端产品
应用
封装图 PACKAGE DIMENSIONS
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订购信息 Ordering Information
| 产品 |
状况 |
Compliance |
具体说明 |
封装 |
MSL* |
容器 |
预算价格 (1千个数量的单价） |
| 类型 |
外形 |
类型 |
数量 |
| NGD8205ANT4G |
Active |
| AEC Qualified |
| PPAP Capable |
| Pb-free |
| Halide free |
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Ignition IGBT, N-Channel, 20 A, 350 V |
DPAK-3 |
369C |
1 |
Tape and Reel |
2500 |
$0.9333 |
数据资料DataSheet下载
