NGTB15N60S1:IGBT/w Diode 600V 15A NPT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Non-Punch through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the IGBT is well suited for motor drive control and other hard switching applications. Incorporated into the device is a rugged co-packaged reverse recovery diode with a low forward voltage.
技术特性
- Low Saturation Voltage Resulting in Low Conduction Loss
- Low Switching Loss in Higher Frequency Applications
- Soft Fast Reverse Recovery Diode
- 5 s Short Circuit Capability
- Excellent Current versus Package Size Performance Density
- This is a Pb−Free Device
终端产品
应用
- Appliance Motor Control
- General Purpose Inverter
|
封装图 PACKAGE DIMENSIONS
|
订购信息 Ordering Information
| 产品 |
状况 |
Compliance |
具体说明 |
封装 |
MSL* |
容器 |
预算价格 (1千个数量的单价） |
| 类型 |
外形 |
类型 |
数量 |
| NGTB15N60S1EG |
Active |
|
IGBT/w Diode 600V 15A NPT |
TO-220-3 |
221A-09 |
1 |
Tube |
50 |
$0.45 |
数据资料DataSheet下载
