NGTB40N60IHLWG:IGBT, 600 V, 40 A, Induction Heating

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in damanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for half bridge resonant applications. Incorporated into the device is a soft and fast co-packaged free wheeling diode with a low forward voltage.

技术特性

Low Saturation Voltage using Trench with Fieldstop Technology
Low Switching Loss Reduces System Power Dissipation
Low Gate Charge
Soft, Fast Free Wheeling Diode
These are Pb−Free Devices

优势

Low Conduction Loss
Reduces System Power Dissipation

终端产品

Inductive Heating Hobs

应用

Half Bridge IH

封装图 PACKAGE DIMENSIONS

订购信息 Ordering Information

产品

状况

Compliance

具体说明

封装

MSL*

容器

预算价格 (1千个数量的单价）

类型

外形

类型

数量

NGTB40N60IHLWG

Active

Pb-free

Halide free

IGBT, 600 V, 40 A, Induction Heating

TO-247-3

340L-02

Tube

$1.69

数据资料DataSheet下载

概述	文档编号/大小	版本
IGBT, 600 V, 40 A, Induction Heating	NGTB40N60IHLWG/D (94.0kB)	2