NRVBD1035CTL:35 V, 10 A Schottky Rectifier
The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. It is ideally suited for use as rectifiers in low voltage, high frequency inverters, free wheeling diodes and polarity protection diodes.
技术特性
- Highly Stable Oxide Passivated Junction
- Guardring for Stress Protection
- Matched Dual Die Construction −May be Paralleled for High Current Output
- High dv/dt Capability
- Short Heat Sink Tap Manufactured − Not Sheared
- Very Low Forward Voltage Drop
- Epoxy Meets UL 94 V−0 @ 0.125 in
- This is a Pb−Free Device
Mechanical Characteristics:
- Case: Epoxy, Molded
- Weight: 0.4 Gram (Approximately)
- Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
- Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
| 应用
- Power Supply - Output Rectification
- Power Management
封装图 PACKAGE DIMENSIONS
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订购信息 Ordering Information
| 产品 |
状况 |
Compliance |
具体说明 |
封装 |
MSL* |
容器 |
预算价格 (1千个数量的单价） |
| 类型 |
外形 |
类型 |
数量 |
| NRVBD1035CTLT4G |
Active |
| AEC Qualified |
| PPAP Capable |
| Pb-free |
|
35 V, 10 A Schottky Rectifier |
DPAK-3 |
369C |
1 |
Tape and Reel |
2500 |
$0.6075 |
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