NSB9435: PNP Bipolar Digital Transistor (BRT)

This digital transistor is designed to replace a single device and its external resistor bias network. The bipolar digital transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. This eliminates these individual components by integrating them into a single device and can reduce both system cost and board space.

技术特性
  • Collector-Emitter Sustaining Voltage - VCEO(sus) = 30 Vdc (Min) @ IC = 10 mAdc
  • High DC Current Gain -hFE = 125 (Min) @ IC = 0.8 Adc = 90 (Min) @ IC = 3.0 Adc
  • Low Collector-Emitter Saturation Voltage - VCE(sat) = 0.275 Vdc (Max) @ IC = 1.2 Adc = 0.55 Vdc (Max) @ IC = 3.0 Adc
  • SOT-223 Surface Mount Packaging
  • ESD Rating - Human Body Model: Class 1B - Machine Model: Class B
  • Pb-Free Package is Available
引脚图 PIN CONNECTIONS

NSB9435引脚图

订购信息 Ordering Information
产品 状况 Compliance 具体说明 封装 MSL* 容器 预算价格 (1千个数量的单价)
类型 外形 类型 数量
NSB9435T1G Active
AEC Qualified
Pb-free
Halide free
PNP Bipolar Digital Transistor (BRT) SOT-223-4 / TO-261-4 318E-04 1 Tape and Reel 1000 $0.1867
NSV9435T1G Active
AEC Qualified
PPAP Capable
Pb-free
Halide free
PNP Bipolar Digital Transistor (BRT) SOT-223-4 / TO-261-4 318E-04 3 Tape and Reel 1000 $0.2053
NSB9435T1 Last Shipments  PNP Bipolar Digital Transistor (BRT) SOT-223-4 / TO-261-4 318E-04 1 Tape and Reel 1000  
数据资料DataSheet下载
概述 版本信息 大小
NSB9435数据资料DataSheet下载:pdf Rev.V2 2 页