NSS12100M3T5G 12 V, 1.0 A PNP Low VCE(sat) Bipolar Transistor

Low VCE(sat) Bipolar Transistors are miniature surface mount devices featuring ultra low saturation voltage VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.

应用
  • Power Management
  • Low Power Switch
技术特性
  • High Current Capability (3 A)
  • High Power Handling (Up to 650 mW)
  • Low VCE(s) (170 mV Typical @ 1 A)
  • Small Size
  • Pb-Free Package is Available
封装图 PACKAGE DIMENSIONS

NSS12100M3T5G封装图

订购信息 Ordering Information
产品 状况 Compliance 具体说明 封装 MSL* 容器 预算价格 (1千个数量的单价)
类型 外形 类型 数量
NSS12100M3T5G Active
AEC Qualified
Pb-free
Halide free
12 V, 1.0 A PNP Low VCE(sat)Bipolar Transistor SOT-723-3 631AA 1 Tape and Reel 8000 $0.1373
数据资料DataSheet下载
概述 文档编号/大小 版本
12 V, 1.0 A PNP Low VCE(sat) Bipolar Transistor NSS12100M3T5G-D(417.0kB) 1