NSS12100XV6T1G 12 V, 1.0 A PNP Low VCE(sat) Bipolar Transistor

Low VCE(sat) Bipolar Transistors are miniature surface mount devices featuring ultra low saturation voltage VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.

应用
  • DC-DC converters
  • Power management in portable and battery powered products
技术特性
  • High Current Capability (1 A)
  • High Power Handling (Up to 740 mW)
  • Low VCE(s) (200 mV Typical @ 500 mA)
  • Small Size Low Noise
  • This is a Pb-Free Device
  • High Specific Current and Power Capability Reduces
  • Required PCB Area Reduced Parasitic Losses Increases Battery Life
  • Digital cameras and MP3 players
封装图 PACKAGE DIMENSIONS

NSS12100XV6T1G封装图

订购信息 Ordering Information
产品 状况 Compliance 具体说明 封装 MSL* 容器 预算价格 (1千个数量的单价)
类型 外形 类型 数量
NSS12100XV6T1G Active
AEC Qualified
Pb-free
Halide free
12 V, 1.0 A PNP Low VCE(sat)Bipolar Transistor SOT-563 463A-01 1 Tape and Reel 4000 $0.1373
NSV12100XV6T1G Active
AEC Qualified
PPAP Capable
Pb-free
Halide free
12 V, 1.0 A PNP Low VCE(sat)Bipolar Transistor SOT-563 463A-01 1 Tape and Reel 4000 $0.1511
数据资料DataSheet下载
概述 文档编号/大小 版本
12 V, 1.0 A PNP Low VCE(sat) Bipolar Transistor NSS12100XV6T1G-D(417.0kB) 1