NSS1C200 2.0 A, 100 V Low VCE(sat) PNP Bipolar Transistor

Low VCE(sat) Bipolar Junction Transistors (BJT) are miniature surface mount devices featuring ultra low saturation voltage VCEsat and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.

技术特性

High Current, Low VCEsat, ESD Robust, High Current Gain, High Cut Off Frequency, Low Profile Package, Linear Gain (Beta)

应用

Load Switching, Battery Charging, External Pass Transistor, DC/DC Converter, Complimentary Driver, Current Extention & Low Drop Out Regulation, Cathode Florescent Lamp drive, Peripheral Driver - LEDs, Motors, Relays

优势

Improved Circuit Efficiency, Decreased Battery Charge Time, Reduce component count, High Frequency Switching, Smaller Portable Product, No distortion

终端产品

Mobile Phones, PDAs, MP3 players, Computers, Power Supplies, Automotive Body Electronics, Toys.

封装图 PACKAGE DIMENSIONS

订购信息 Ordering Information

产品

状况

Compliance

具体说明

封装

MSL*

容器

预算价格 (1千个数量的单价）

类型

外形

类型

数量

NSS1C200MZ4T1G

Active

AEC Qualified

Pb-free

Halide free

2.0 A, 100 V Low VCE(sat)PNP Bipolar Transistor

SOT-223-4 / TO-261-4

318E-04

Tape and Reel

1000

$0.176

NSS1C200MZ4T3G

Active

AEC Qualified

Pb-free

Halide free

2.0 A, 100 V Low VCE(sat)PNP Bipolar Transistor

SOT-223-4 / TO-261-4

318E-04

Tape and Reel

4000

$0.176

NSV1C200MZ4T1G

Active

AEC Qualified

PPAP Capable

Pb-free

Halide free

2.0 A, 100 V Low VCE(sat)PNP Bipolar Transistor

SOT-223-4 / TO-261-4

318E-04

Tape and Reel

1000

$0.1936

数据资料DataSheet下载

概述	版本信息	大小
NSS1C200 数据资料DataSheet下载:pdf	Rev.V2	2 页