NSS30101LT1G 30 V, 1.0 A PNP Low VCE(sat) Bipolar Transistor

Low VCE(sat) Bipolar Transistors are miniature surface mount devices featuring ultra low saturation voltage VCE(sat) and high current gain capability. These are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important.

应用
  • Load Switching, Battery Charging, External Pass Transistor, DC/DC Converter, Complimentary Driver, Current Extention & Low Drop Out Regulation, Cathode Florescent Lamp drive, Peripheral Driver - LEDs, Motors, Relays
技术特性
  • High Current, Low VCEsat, ESD Robust, High Current Gain, High Cut Off Frequency, Low Profile Package, Linear Gain (Beta)
封装图 PACKAGE DIMENSIONS

NSS30101LT1G封装图

订购信息 Ordering Information
产品 状况 Compliance 具体说明 封装 MSL* 容器 预算价格 (1千个数量的单价)
类型 外形 类型 数量
NSS30101LT1G Active
AEC Qualified
Pb-free
Halide free
30 V, 1.0 A NPN Low VCE(sat)Bipolar Transistor SOT-23-3 318-08 1 Tape and Reel 3000 $0.1333
数据资料DataSheet下载
概述 文档编号/大小 版本
30 V, 1.0 A PNP Low VCE(sat) Bipolar Transistor NSS30101LT1G-D(417.0kB) 1