NT4N03:Power MOSFET 30V 4A 60mOhm Dual N-Channel S0-8

Power MOSFET 4 Amps, 30 Volts, N-Channel SO8 Dual

技术特性
  • Designed for use in low voltage, high speed switching applications
  • Ultra Low On−Resistance Provides
    Higher Efficiency and Extends Battery Life
    − RDS(on)= 0.048 , VGS = 10 V (Typ)
    − RDS(on)= 0.065 , VGS = 4.5 V (Typ)
  • Miniature SO−8 Surface Mount Package − Saves Board Space
  • Diode is Characterized for Use in Bridge Circuits
  • Diode Exhibits High Speed, with Soft Recovery
  • AEC Q101 Qualified − NVMD4N03R2
  • These Devices are Pb−Free and are RoHS Compliant
应用
  • Dc-Dc Converters, Computers, Printers, Cellular Phones, Cordless Phones, Disk Drives, and Tape Drives
封装图 PACKAGE DIMENSIONS

NT4N03封装图

订购信息 Ordering Information
产品 状况 Compliance 具体说明 封装 MSL* 容器 预算价格 (1千个数量的单价)
类型 外形 类型 数量
NTMD4N03R2G Active
Pb-free
Halide free
Power MOSFET 30V 4A 60mOhm Dual N-Channel S0-8 SOIC-8 751-07 1 Tape and Reel 2500 $0.308
NVMD4N03R2G Active
AEC Qualified
PPAP Capable
Pb-free
Halide free
Power MOSFET 30V 4A 60mOhm Dual N-Channel S0-8 SOIC-8 751-07 1 Tape and Reel 2500 $0.3388
数据资料DataSheet下载
概述 文档编号/大小 版本
Power MOSFET 30V 4A 60mOhm Dual N-Channel S0-8 NT4N03/D (94.0kB) 2