NT4N03:Power MOSFET 30V 4A 60mOhm Dual N-Channel S0-8
Power MOSFET 4 Amps, 30 Volts, N-Channel SO8 Dual
技术特性
- Designed for use in low voltage, high speed switching applications
- Ultra Low On−Resistance Provides
Higher Efficiency and Extends Battery Life
− RDS(on)= 0.048 , VGS = 10 V (Typ)
− RDS(on)= 0.065 , VGS = 4.5 V (Typ)
- Miniature SO−8 Surface Mount Package − Saves Board Space
- Diode is Characterized for Use in Bridge Circuits
- Diode Exhibits High Speed, with Soft Recovery
- AEC Q101 Qualified − NVMD4N03R2
- These Devices are Pb−Free and are RoHS Compliant
应用
- Dc-Dc Converters, Computers, Printers, Cellular Phones, Cordless Phones, Disk Drives, and Tape Drives
|
封装图 PACKAGE DIMENSIONS
|
订购信息 Ordering Information
产品 |
状况 |
Compliance |
具体说明 |
封装 |
MSL* |
容器 |
预算价格 (1千个数量的单价) |
类型 |
外形 |
类型 |
数量 |
NTMD4N03R2G |
Active |
|
Power MOSFET 30V 4A 60mOhm Dual N-Channel S0-8 |
SOIC-8 |
751-07 |
1 |
Tape and Reel |
2500 |
$0.308 |
NVMD4N03R2G |
Active |
AEC Qualified |
PPAP Capable |
Pb-free |
Halide free |
|
Power MOSFET 30V 4A 60mOhm Dual N-Channel S0-8 |
SOIC-8 |
751-07 |
1 |
Tape and Reel |
2500 |
$0.3388 |
数据资料DataSheet下载