NTB5860N:Power MOSFET 60V 169A 3.0 mOhm Single N-Channel D2PAK
Designed for high speed switching applications in power supplies, converters, PWM motor controls, and other inductive loads, this power MOSFET can withstand high energy in the avalanche and commutation modes. The avalanche energy rating is specified to eliminate the guesswork in designs where inductive loads are switched, and to offer additional safety margin against unexpected voltage transients. The energy efficient design also offers a drain to source diode with fast recovery time.
技术特性
- Low RDS(on)
- High Current Capability
- 100% Avalanche Tested
- These Devices are Pb−Free, Halogen Free and are RoHS Compliant
- NVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
优势
- Low conduction losses
- Suitable for automotive applications
- Good for high power applications
- RoHS compliant
应用
- Motor Control
- Battery Protection
- Load Switch
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终端产品
封装图 PACKAGE DIMENSIONS
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订购信息 Ordering Information
| 产品 |
状况 |
Compliance |
具体说明 |
封装 |
MSL* |
容器 |
预算价格 (1千个数量的单价） |
| 类型 |
外形 |
类型 |
数量 |
| NTB5860NT4G |
Active |
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Power MOSFET 60V 169A 3.0 mOhm Single N-Channel D2PAK |
D2PAK-3 |
418B-04 |
1 |
Tape and Reel |
800 |
$1.6924 |
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