技术特性

• Planar HD3e Process for Fast Switching Performance
  
• Low RDS(on)to Minimize Conduction Loss
  
• Low Cissto Minimize Driver Loss
  
• Low Gate Charge
  
• Optimized for High Side Switching Requirements in
  High−Efficiency DC−DC Converters
  
• NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
  
• These Devices are Pb−Free and are RoHS Compliant

封装图 PACKAGE DIMENSIONS