NTD4856N:Power MOSFET 25V 89A 4.7 mOhm Single N Channel DPAK

Power MOSFET Single N Channel, 25V, 89A, DPAK/IPAK

技术特性
  • Trench Technology
  • Low RDS(on) to Minimize Conduction Losses
  • Low Capacitance to Minimize Driver Losses
  • Optimized Gate Charge to Minimize Switching Losses
  • NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
  • These Devices are Pb−Free and are RoHS Compliant
应用
  • VCORE
终端产品
  • Desktop PC, Graphic Cards, Game Consoles, and other computing and consumer end products
优势
  • Minimize Conduction Losses
  • Minimize Driver Losses
  • Minimize Switching Losses
封装图 PACKAGE DIMENSIONS

NTD4856N封装图

订购信息 Ordering Information
产品 状况 Compliance 具体说明 封装 MSL* 容器 预算价格 (1千个数量的单价)
类型 外形 类型 数量
NTD4856N-1G Last Shipments 
Pb-free
Halide free
Power MOSFET 25V 89A 4.7 mOhm Single N Channel DPAK IPAK-4 369D 1 Tube 75  
NTD4856N-35G Last Shipments 
Pb-free
Halide free
Power MOSFET 25V 89A 4.7 mOhm Single N Channel DPAK IPAK-3 369AD 1 Tube 75  
NTD4856NT4G Last Shipments 
Pb-free
Halide free
Power MOSFET 25V 89A 4.7 mOhm Single N Channel DPAK DPAK-3 369AA 1 Tape and Reel 2500  
NVD4856NT4G Active
AEC Qualified
PPAP Capable
Pb-free
Power MOSFET 25V 89A 4.7 mOhm Single N Channel DPAK DPAK-3 369AA 1 Tape and Reel 2500 $0.3707
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Power MOSFET 25V 89A 4.7 mOhm Single N Channel DPAK NTD4856N/D (94.0kB) 2