NTD4856N:Power MOSFET 25V 89A 4.7 mOhm Single N Channel DPAK
Power MOSFET Single N Channel, 25V, 89A, DPAK/IPAK
技术特性
- Trench Technology
- Low RDS(on) to Minimize Conduction Losses
- Low Capacitance to Minimize Driver Losses
- Optimized Gate Charge to Minimize Switching Losses
- NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
- These Devices are Pb−Free and are RoHS Compliant
应用
终端产品
- Desktop PC, Graphic Cards, Game Consoles, and other computing and consumer end products
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优势
- Minimize Conduction Losses
- Minimize Driver Losses
- Minimize Switching Losses
封装图 PACKAGE DIMENSIONS
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订购信息 Ordering Information
产品 |
状况 |
Compliance |
具体说明 |
封装 |
MSL* |
容器 |
预算价格 (1千个数量的单价) |
类型 |
外形 |
类型 |
数量 |
NTD4856N-1G |
Last Shipments |
|
Power MOSFET 25V 89A 4.7 mOhm Single N Channel DPAK |
IPAK-4 |
369D |
1 |
Tube |
75 |
|
NTD4856N-35G |
Last Shipments |
|
Power MOSFET 25V 89A 4.7 mOhm Single N Channel DPAK |
IPAK-3 |
369AD |
1 |
Tube |
75 |
|
NTD4856NT4G |
Last Shipments |
|
Power MOSFET 25V 89A 4.7 mOhm Single N Channel DPAK |
DPAK-3 |
369AA |
1 |
Tape and Reel |
2500 |
|
NVD4856NT4G |
Active |
AEC Qualified |
PPAP Capable |
Pb-free |
|
Power MOSFET 25V 89A 4.7 mOhm Single N Channel DPAK |
DPAK-3 |
369AA |
1 |
Tape and Reel |
2500 |
$0.3707 |
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