NTD5802N: Power MOSFET 40V 101A 4.4 mOhm Single N-Channel DPAK
Power MOSFET 40 V, 38 A, Single N-Channel, DPAK
技术特性
- Low RDS(on)to Minimize Conduction Losses
- Low Capacitance to Minimize Driver Losses
- Optimized Gate Charge to Minimize Switching Losses
- MSL 1/260°C
- AEC Q101 Qualified
- 100% Avalanche Tested
- AEC Q101 Qualified − NVD5802N
- These Devices are Pb−Free and are RoHS Compliant
应用
优势
- Minimize Conduction Losses
- Minimizes Driver Losses
- Minimizes Switching Losses
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封装图 PACKAGE DIMENSIONS
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订购信息 Ordering Information
产品 |
状况 |
Compliance |
具体说明 |
封装 |
MSL* |
容器 |
预算价格 (1千个数量的单价) |
类型 |
外形 |
类型 |
数量 |
NTD5802NT4G |
Active |
|
Power MOSFET 40V 101A 4.4 mOhm Single N-Channel DPAK |
DPAK-3 |
369C |
1 |
Tape and Reel |
2500 |
$0.712 |
NVD5802NT4G |
Active |
AEC Qualified |
PPAP Capable |
Pb-free |
Halide free |
|
Power MOSFET 40V 101A 4.4 mOhm Single N-Channel DPAK |
DPAK-3 |
369C |
1 |
Tape and Reel |
2500 |
$0.534 |
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