NTD5802N: Power MOSFET 40V 101A 4.4 mOhm Single N-Channel DPAK

Power MOSFET 40 V, 38 A, Single N-Channel, DPAK

技术特性
  • Low RDS(on)to Minimize Conduction Losses
  • Low Capacitance to Minimize Driver Losses
  • Optimized Gate Charge to Minimize Switching Losses
  • MSL 1/260°C
  • AEC Q101 Qualified
  • 100% Avalanche Tested
  • AEC Q101 Qualified − NVD5802N
  • These Devices are Pb−Free and are RoHS Compliant
应用
  • CPU Power Delivery
优势
  • Minimize Conduction Losses
  • Minimizes Driver Losses
  • Minimizes Switching Losses
封装图 PACKAGE DIMENSIONS

NTD5802N封装图

订购信息 Ordering Information
产品 状况 Compliance 具体说明 封装 MSL* 容器 预算价格 (1千个数量的单价)
类型 外形 类型 数量
NTD5802NT4G Active
Pb-free
Halide free
Power MOSFET 40V 101A 4.4 mOhm Single N-Channel DPAK DPAK-3 369C 1 Tape and Reel 2500 $0.712
NVD5802NT4G Active
AEC Qualified
PPAP Capable
Pb-free
Halide free
Power MOSFET 40V 101A 4.4 mOhm Single N-Channel DPAK DPAK-3 369C 1 Tape and Reel 2500 $0.534
数据资料DataSheet下载
概述 文档编号/大小 版本
Power MOSFET 40V 101A 4.4 mOhm Single N-Channel DPAK NTD5802N/D (94.0kB) 2