NTD5806N:Power MOSFET 40V 33A 19 mOhm Single N-Channel DPAK
40V, 33A, 19 mOhm RDS(on), Single N-Channel, DPAK, Power MOSFET
技术特性
- Low RDS(on)
- High Current Capability
- Avalanche Energy Specified
- AEC−Q101 Qualified and PPAP Capable − NVD5806N
- These Devices are Pb−Free and are RoHS Compliant
应用
- CCFL Backlight
- DC Motor Control
- Power Supply Secondary Side Synchronous Rectification
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封装图 PACKAGE DIMENSIONS
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订购信息 Ordering Information
| 产品 |
状况 |
Compliance |
具体说明 |
封装 |
MSL* |
容器 |
预算价格 (1千个数量的单价） |
| 类型 |
外形 |
类型 |
数量 |
| NTD5806NT4G |
Active |
|
Power MOSFET 40V 33A 19 mOhm Single N-Channel DPAK |
DPAK-3 |
369AA |
1 |
Tape and Reel |
2500 |
$0.244 |
| NVD5806NT4G |
Active |
| AEC Qualified |
| PPAP Capable |
| Pb-free |
| Halide free |
|
Power MOSFET 40V 33A 19 mOhm Single N-Channel DPAK |
DPAK-3 |
369AA |
1 |
Tape and Reel |
2500 |
$0.1916 |
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