技术特性

• Complementary N−Channel and P−Channel MOSFET
  
• Small Size (3 x 3 mm) Dual TSOP−6 Package
  
• Leading Edge Trench Technology for Low On Resistance
  
• Reduced Gate Charge to Improve Switching Response
  
• Independently Connected Devices to Provide Design Flexibility
  
• This is a Pb−Free Device

应用

• DC-DC Conversion Circuits
• Load/Power Switching with Level Shift

终端产品

• Cell Phone, PMP, DSC, GPS, Portable Video Games, PC, Printers, Perepherals,DTV, Set Top Box, and other computing and digital consumer products

优势

• Industry STD Footprint
• Improved Switching Response
• Provides Design Flexibility

封装图 PACKAGE DIMENSIONS