NTHC5513:Power MOSFET 20V 3.9A 80 mOhm Complementary ChipFET

This complementary (N and P Channel) device was designed with a small footprint package and ON Semiconductor's leading low RDS(on) technology for increased circuit efficiency. The performance is ideally suited for portable or handheld applications.

技术特性
  • Complementary N−Channel and P−Channel MOSFET
  • Small Size, 40% Smaller than TSOP−6 Package
  • Leadless SMD Package Featuring Complementary Pair
  • ChipFET Package Provides Great Thermal Characteristics Similar to
    Larger Packages
  • Low RDS(on)in a ChipFET Package for High Efficiency Performance
  • Low Profile (< 1.10 mm) Allows Placement in Extremely Thin
    Environments Such as Portable Electronics
  • Pb−Free Package is Available
应用
  • Load Switch Applications Requiring Level Shift
  • DC-DC Conversion Circuits
  • Drives Small Brushless DC Motors
  • Designed for Power Management Applications in Portable and Battery Power Products
封装图 PACKAGE DIMENSIONS

NTHC5513封装图

订购信息 Ordering Information
产品 状况 Compliance 具体说明 封装 MSL* 容器 预算价格 (1千个数量的单价)
类型 外形 类型 数量
NTHC5513T1G Active
Pb-free
Halide free
Power MOSFET 20V 3.9A 80 mOhm Complementary ChipFET ChipFET-8 1206A-03 1 Tape and Reel 3000 $0.1733
数据资料DataSheet下载
概述 文档编号/大小 版本
Power MOSFET 20V 3.9A 80 mOhm Complementary ChipFET NTHC5513/D (94.0kB) 2