NTHD3101F:Power MOSFET 20V 4.4A 80 mOhm Dual P-Channel ChipFET with Schottky Diode
Power MOSFET and Schottky Diode -20 V, FETKY®, P-Channel, -4.4A, w/ 4.1 A Schottky Barrier Diode, ChipFET™
技术特性
- Leadless SMD Package Featuring a MOSFET and Schottky Diode
- 40% Smaller than TSOP−6 Package
- Leadless SMD Package Provides Great Thermal Characteristics
- Independent Pinout to each Device to Ease Circuit Design
- Trench P−Channel for Low On Resistance
- Ultra Low VF Schottky
- Pb−Free Packages are Available
应用
- Li-Ion Battery Charging
- High Side DC-DC Conversion Circuits
- High Side Drive for Small Brushless DC Motors
- Power Management in Portable, Battery Powered Products
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封装图 PACKAGE DIMENSIONS
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订购信息 Ordering Information
| 产品 |
状况 |
Compliance |
具体说明 |
封装 |
MSL* |
容器 |
预算价格 (1千个数量的单价） |
| 类型 |
外形 |
类型 |
数量 |
| NTHD3101FT1G |
Active |
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Power MOSFET 20V 4.4A 80 mOhm Dual P-Channel ChipFET with Schottky Diode |
ChipFET-8 |
1206A-03 |
1 |
Tape and Reel |
3000 |
$0.1733 |
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