NTLGD3502N:Power MOSFET 20V 5.8A 60 mOhm Dual N-Channel DFN
Power MOSFET 20 V, 5.8 A/4.6 A Dual N-Channel, DFN6 3x3 mm Package
技术特性
- Exposed Drain Package
- Excellent Thermal Resistance for Superior Heat Dissipation
- Low Threshold Levels
- Low Profile (< 1 mm) Allows It to Fit Easily into Extremely Thin
Environments
- This is a Pb-Free Device
应用
- DC-DC Converters (Buck and Boost Circuits)
终端产品
- Power Supplies and Hard Disk Drives
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封装图 PACKAGE DIMENSIONS
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订购信息 Ordering Information
| 产品 |
状况 |
Compliance |
具体说明 |
封装 |
MSL* |
容器 |
预算价格 (1千个数量的单价） |
| 类型 |
外形 |
类型 |
数量 |
| NTLGD3502NT1G |
Last Shipments |
|
Power MOSFET 20V 5.8A 60 mOhm Dual N-Channel DFN |
DFN-6 |
506AG |
1 |
Tape and Reel |
3000 |
|
| NTLGD3502NT2G |
Active |
|
Power MOSFET 20V 5.8A 60 mOhm Dual N-Channel DFN |
DFN-6 |
506AG |
1 |
Tape and Reel |
3000 |
$0.4667 |
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