NTLJD3119C: Power MOSFET 20V 4.6A 65 mOhm Complementary WDFN6
Power MOSFET 20 V/-20 V, 4.6 A/-4.1 A, µCool ™ Complementary, 2x2 mm, WDFN Package
技术特性
- Complementary N−Channel and P−Channel MOSFET
- WDFN Package with Exposed Drain Pad for Excellent Thermal
Conduction
- Footprint Same as SC−88 Package
- Leading Edge Trench Technology for Low On Resistance
- 1.8 V Gate Threshold Voltage
- Low Profile (< 0.8 mm) for Easy Fit in Thin Environments
- This is a Pb−Free Device
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封装图 PACKAGE DIMENSIONS
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订购信息 Ordering Information
| 产品 |
状况 |
Compliance |
具体说明 |
封装 |
MSL* |
容器 |
预算价格 (1千个数量的单价） |
| 类型 |
外形 |
类型 |
数量 |
| NTLJD3119CTAG |
Last Shipments |
|
Power MOSFET 20V 4.6A 65 mOhm Complementary WDFN6 |
WDFN-6 |
506AN |
1 |
Tape and Reel |
3000 |
|
| NTLJD3119CTBG |
Active |
|
Power MOSFET 20V 4.6A 65 mOhm Complementary WDFN6 |
WDFN-6 |
506AN |
1 |
Tape and Reel |
3000 |
$0.2 |
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