NTMD6N04R2: Power MOSFET 40V 4.6A 34 mOhm Dual N-Channel SO-8
Power MOSFET 6.0 Amps, 20 Volts N-Channel Enhancement Mode Dual, SO-8 Package
技术特性
- Designed for use in low voltage, high speed switching applications
- Ultra Low On−Resistance Provides
Higher Efficiency and Extends Battery Life
− RDS(on)= 0.027 , VGS = 10 V (Typ)
− RDS(on)= 0.034 , VGS = 4.5 V (Typ)
- Miniature SOIC−8 Surface Mount Package Saves Board Space
- Diode is Characterized for Use in Bridge Circuits
- Diode Exhibits High Speed, with Soft Recovery
- NVMD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
- These Devices are Pb−Free and are RoHS Compliant
应用
- DC-DC Converter
- Computers
- Printers
- Buck-Boost Circuit
|
优势
- Fast Switching
- Extends Battery Life
- Saves board space
封装图 PACKAGE DIMENSIONS
|
订购信息 Ordering Information
产品 |
状况 |
Compliance |
具体说明 |
封装 |
MSL* |
容器 |
预算价格 (1千个数量的单价) |
类型 |
外形 |
类型 |
数量 |
NTMD6N04R2G |
Active |
|
Power MOSFET 40V 4.6A 34 mOhm Dual N-Channel SO-8 |
SOIC-8 |
751-07 |
1 |
Tape and Reel |
2500 |
$0.2765 |
NVMD6N04R2G |
Active |
AEC Qualified |
PPAP Capable |
Pb-free |
Halide free |
|
Power MOSFET 40V 4.6A 34 mOhm Dual N-Channel SO-8 |
SOIC-8 |
751-07 |
1 |
Tape and Reel |
2500 |
$0.3943 |
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