NTMD6N04R2: Power MOSFET 40V 4.6A 34 mOhm Dual N-Channel SO-8

Power MOSFET 6.0 Amps, 20 Volts N-Channel Enhancement Mode Dual, SO-8 Package

技术特性
  • Designed for use in low voltage, high speed switching applications
  • Ultra Low On−Resistance Provides
    Higher Efficiency and Extends Battery Life
    − RDS(on)= 0.027 , VGS = 10 V (Typ)
    − RDS(on)= 0.034 , VGS = 4.5 V (Typ)
  • Miniature SOIC−8 Surface Mount Package Saves Board Space
  • Diode is Characterized for Use in Bridge Circuits
  • Diode Exhibits High Speed, with Soft Recovery
  • NVMD Prefix for Automotive and Other Applications Requiring
    Unique Site and Control Change Requirements; AEC−Q101
    Qualified and PPAP Capable
  • These Devices are Pb−Free and are RoHS Compliant
应用
  • DC-DC Converter
  • Computers
  • Printers
  • Buck-Boost Circuit
优势
  • Fast Switching
  • Extends Battery Life
  • Saves board space
封装图 PACKAGE DIMENSIONS

NTMD6N04R2封装图

订购信息 Ordering Information
产品 状况 Compliance 具体说明 封装 MSL* 容器 预算价格 (1千个数量的单价)
类型 外形 类型 数量
NTMD6N04R2G Active
Pb-free
Halide free
Power MOSFET 40V 4.6A 34 mOhm Dual N-Channel SO-8 SOIC-8 751-07 1 Tape and Reel 2500 $0.2765
NVMD6N04R2G Active
AEC Qualified
PPAP Capable
Pb-free
Halide free
Power MOSFET 40V 4.6A 34 mOhm Dual N-Channel SO-8 SOIC-8 751-07 1 Tape and Reel 2500 $0.3943
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Power MOSFET 40V 4.6A 34 mOhm Dual N-Channel SO-8 NTMD6N04R2/D (94.0kB) 2