NTMD6P02:Small Signal MOSFET 20V 7.8A 33 mOhm Dual P-Channel SO-8

Power MOSFET 6.0 Amps, 20 Volts N-Channel Enhancement Mode Dual, SO-8 Package

技术特性
  • Ultra Low RDS(on)
  • Higher Efficiency Extending Battery Life
  • Logic Level Gate Drive
  • Miniature Dual SOIC−8 Surface Mount Package
  • Diode Exhibits High Speed, Soft Recovery
  • Avalanche Energy Specified
  • These Devices are Pb−Free and are RoHS Compliant
  • NVMD Prefix for Automotive and Other Applications Requiring
    Unique Site and Control Change Requirements; AEC−Q101
    Qualified and PPAP Capable
应用
  • Power Management in Portable and Battery-Powered Products, i.e.: Cellular and Cordless Telephones and PCMCIA Cards
封装图 PACKAGE DIMENSIONS

NTMD6P02封装图

订购信息 Ordering Information
产品 状况 Compliance 具体说明 封装 MSL* 容器 预算价格 (1千个数量的单价)
类型 外形 类型 数量
NTMD6P02R2G Active
Pb-free
Halide free
Small Signal MOSFET 20V 7.8A 33 mOhm Dual P-Channel SO-8 SOIC-8 751-07 1 Tape and Reel 2500 $0.3496
数据资料DataSheet下载
概述 文档编号/大小 版本
Small Signal MOSFET 20V 7.8A 33 mOhm Dual P-Channel SO-8 NTMD6P02/D (94.0kB) 2