NTMFD4902NF:Power MOSFET 30V 18A 10/6.2mohm Asymmetrical Dual N Channel SO-8FL

技术特性
  • Co−Packaged Power Stage Solution to Minimize Board Space
  • Low Side MOSFET with Integrated Schottky
  • Minimized Parasitic Inductances
  • Optimized Devices to Reduce Power Losses
  • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
    Compliant
封装图 PACKAGE DIMENSIONS

NTMFD4902NF封装图

评估板信息
评估板 状况 无铅(Pb-free) 简短说明
DUALASYMA5VGEVB Active Pb-free DUAL ASYMMETRICAL AG
DUALASYMB12VGEVB Active Pb-free DUAL ASYMMETRICAL BG
订购信息 Ordering Information
产品 状况 Compliance 具体说明 封装 MSL* 容器 预算价格 (1千个数量的单价)
类型 外形 类型 数量
NTMFD4902NFT1G Active
Pb-free
Halide free
Power MOSFET 30V 18A 10/6.2mohm Asymmetrical Dual N Channel SO-8FL SO-8FL Dual / DFN-8 506BX 1 Tape and Reel 1500 $0.6966
NTMFD4902NFT3G Active
Pb-free
Halide free
Power MOSFET 30V 18A 10/6.2mohm Asymmetrical Dual N Channel SO-8FL SO-8FL Dual / DFN-8 506BX 1 Tape and Reel 5000 $0.6966
数据资料DataSheet下载
概述 文档编号/大小 版本
Power MOSFET 30V 18A 10/6.2mohm Asymmetrical Dual N Channel SO-8FL NTMFD4902NF/D (94.0kB) 2