NTMFS4922NE: Power MOSFET 30 V 147 A 2.0 mOhm Single N-Channel Thermally Enhanced SO-8FL

Power MOSFET, 30V, 58.5A, Single N Channel, SO8FL

技术特性
  • Low RDS(on)to Minimize Conduction Losses
  • Low Capacitance to Minimize Driver Losses
  • Optimized Gate Charge to Minimize Switching Losses
  • Dual Sided Cooling Capability
  • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
    Compliant
应用
  • CPU Power Delivery, DCDC Converters
封装图 PACKAGE DIMENSIONS

NTMFS4922NE封装图

评估板信息
评估板 状况 无铅(Pb-free) 简短说明
ONS321A5VGEVB Active Pb-free FET EVAL BD W 5V VGS DR
ONS321B12VGEVB Active Pb-free FET EVAL BD W 12V VGS DR
订购信息 Ordering Information
产品 状况 Compliance 具体说明 封装 MSL* 容器 预算价格 (1千个数量的单价)
类型 外形 类型 数量
NTMFS4922NET1G Active
Pb-free
Halide free
Power MOSFET 30 V 147 A 2.0 mOhm Single N-Channel Thermally Enhanced SO-8FL SO-8FL / DFN-5 488AA 3 Tape and Reel 1500 $0.922
NTMFS4922NET3G Consult Sales Office
Pb-free
Halide free
Power MOSFET 30 V 147 A 2.0 mOhm Single N-Channel Thermally Enhanced SO-8FL SO-8FL / DFN-5 488AA 3 Tape and Reel 5000  
数据资料DataSheet下载
概述 文档编号/大小 版本
Power MOSFET 30 V 147 A 2.0 mOhm Single N-Channel Thermally Enhanced SO-8FL NTMFS4922NE/D (94.0kB) 2