技术特性

• Single N−Channel MOSFET
  
• Ultra Low Profile SOT−883 (XDFN3) 1.0 x 0.6 x 0.4 mm for Extremely Thin Environments Such as Portable Electronics
  
• Low RDS(on) Solution in the Ultra Small 1.0 x 0.6 mm Package
  
• 1.5 V Gate Drive
  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
  Compliant

应用

• High Side Switch
• High Speed Interfacing
• Optimized for Power Management in Ultra Portable Solutions

终端产品

• Smart Phones, Media Tablets, DSCs, Portable Game Players, Others

优势

• Ideal for Space-Constraint Environments
• Minimize Conduction Losses and Improve efficiencies
• Operates at Low Logic Level voltage
• Comply with RoHS

封装图 PACKAGE DIMENSIONS