NUS5530MN Integrated Power 20V 3.9A 60 mOhm Dual P-Channel MOSFET DFN with PNP Low VCE Switching Transistor
This integrated device represents a new level of safety and board-space reduction by combining the 20 V P-Channel with a PNP Silicon Low VCE(sat) switching transistor. This newly integrated product provides higher efficiency and accuracy for battery powered portable electronics.
应用
- Power Management in Portable and Battery-Powered Products; i.e., Cellular and Cordless Telephones and PCMCIA Cards
技术特性
- Low RDS(on) (MOSFET) and Low VCE(sat) (Transistor)
- Higher Efficiency Extending Battery Life
- Logic Level Gate Drive (MOSFET)
- Performance DFN Package
- This is a Pb-Free Device
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封装图 PACKAGE DIMENSIONS
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订购信息 Ordering Information
| 产品 |
状况 |
Compliance |
具体说明 |
封装 |
MSL* |
容器 |
预算价格 (1千个数量的单价） |
| 类型 |
外形 |
类型 |
数量 |
| NUS5530MNR2G |
Active |
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Integrated Power 20V 3.9A 60 mOhm Dual P-Channel MOSFET DFN with PNP Low VCE Switching Transistor |
DFN-8 |
506AL |
1 |
Tape and Reel |
3000 |
$0.4933 |
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