NVD5890N: Power MOSFET 40V 123A 3.7mOhm Single N−Channel DPAK
Single N-Channel Power MOSFET 40 V, 123 A, 3.7 mOhm DPAK
技术特性
- Low RDS(on)to Minimize Conduction Losses
- MSL 1/260°C
- AEC Q101 Qualified and PPAP Capable
- 100% Avalanche Tested
- These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
应用
- Motor Drivers
- Automotive Pump Drivers
终端产品
- Automotive engine controller units
- Automotitve body controllers
|
优势
- Minimizes conduction losses
- Provides for robust load drive performance
- Suitable for automotive systems
- Safeguards against voltage overstress
封装图 PACKAGE DIMENSIONS
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订购信息 Ordering Information
| 产品 |
状况 |
Compliance |
具体说明 |
封装 |
MSL* |
容器 |
预算价格 (1千个数量的单价） |
| 类型 |
外形 |
类型 |
数量 |
| NVD5890NT4G |
Active |
| AEC Qualified |
| PPAP Capable |
| Pb-free |
| Halide free |
|
Power MOSFET 40V 123A 3.7mOhm Single N−Channel DPAK, Power MOSFET 40 V, 100 A, Single N−Channel |
DPAK-3 |
369C |
1 |
Tape and Reel |
2500 |
$0.5423 |
数据资料DataSheet下载
