SS16:60 V, 1.0 A Schottky Rectifier
This Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. The Schottky Rectifier is ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system.
技术特性
- Small Compact Surface Mountable Package with J−Bent Leads
- Rectangular Package for Automated Handling
- Highly Stable Oxide Passivated Junction
- Very Low Forward Voltage Drop
- Guardring for Stress Protection
- AEC−Q101 Qualified and PPAP Capable
- SBRA8 Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
- All Packages are Pb-Free*
| 封装图 PACKAGE DIMENSIONS
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订购信息 Ordering Information
产品 |
状况 |
Compliance |
具体说明 |
封装 |
MSL* |
容器 |
预算价格 (1千个数量的单价) |
类型 |
外形 |
类型 |
数量 |
SBRA8160T3G |
Active |
AEC Qualified |
PPAP Capable |
Pb-free |
Halide free |
|
60 V, 1.0 A Schottky Rectifier |
SMA-2 |
403D-02 |
1 |
Tape and Reel |
5000 |
$0.1748 |
SS16T3G |
Active |
AEC Qualified |
Pb-free |
Halide free |
|
60 V, 1.0 A Schottky Rectifier |
SMA-2 |
403D-02 |
1 |
Tape and Reel |
5000 |
$0.1467 |
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