SS26:60 V, 2.0 A Schottky Rectifier
This Schottky Rectifier employs the Schottky Barrier principle in a metal-to-silicon power rectifier. It features epitaxial construction with oxide passivation and metal overlay contact. This Schottky Rectifier is ideally suited for low voltage, high frequency switching power supplies, free wheeling diodes and polarity protection diodes.
技术特性
- Compact Package with J−Bend Leads Ideal for Automated Handling
- Highly Stable Oxide Passivated Junction
- Guardring for Overvoltage Protection
- Low Forward Voltage Drop
- Pb−Free Package is Available
| 封装图 PACKAGE DIMENSIONS
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订购信息 Ordering Information
| 产品 |
状况 |
Compliance |
具体说明 |
封装 |
MSL* |
容器 |
预算价格 (1千个数量的单价） |
| 类型 |
外形 |
类型 |
数量 |
| SS26T3G |
Active |
| AEC Qualified |
| Pb-free |
| Halide free |
|
60 V, 2.0 A Schottky Rectifier |
SMB-2 |
403A-03 |
1 |
Tape and Reel |
2500 |
$0.1533 |
| SS26T3 |
Last Shipments |
|
60 V, 2.0 A Schottky Rectifier |
SMB-2 |
403A-03 |
1 |
Tape and Reel |
2500 |
|
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