TIP33C:High Power NPN Bipolar Power Transistor

The Bipolar Power Transistor is designed for general-purpose power amplifier and switching applications

技术特性
  • 10 A Collector Current
  • Low Leakage Current - ICEO = 0.7 mA @ 60 V
  • Excellent dc Gain - hFE = 40 Typ @ 3.0 A
  • High Current Gain Bandwidth Product - hfe = 3.0 min @ IC = 0.5 A, f = 1.0 MHz
  • Pb-Free Packages are Available
封装图 PACKAGE DIMENSIONS

TIP33C封装图

订购信息 Ordering Information
产品 状况 Compliance 具体说明 封装 MSL* 容器 预算价格 (1千个数量的单价)
类型 外形 类型 数量
TIP33CG Active
Pb-free
High Power NPN Bipolar Power Transistor TO-247-3 340L-02 Tube 30 $0.8573
TIP33C Last Shipments High Power NPN Bipolar Power Transistor SOT-93-3 / TO-218-3 340D-02 Tube 30  
数据资料DataSheet下载
概述 文档编号/大小 版本
High Power NPN Bipolar Power Transistor TIP33C-D(417.0kB) 3