2N7000 N-channel 60 V, 1.8 Ohm, 0.35 A STripFET(TM) II Power MOSFET in a TO-92 package
This Power MOSFET is the second generation of STMicroelectronics unique "single feature size" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility
技术特性
- Low Qg
- Low threshold drive
应用领域
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内部原理图
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2N7000 订购信息
订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
2N7000 |
NRND |
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1000 |
TO-92 |
Poly Bag |
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2N7000 |
DATASHEET
描述 |
版本 |
大小 |
2N7000 :DS3694: N-channel 60 V, 1.8 Ω, 0.35 A, SOT23-3L, TO-92 STripFET™ Power MOSFET |
9 |
625KB |