2ST2121 High power PNP epitaxial planar bipolar transistor
The device is a PNP transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour
技术特性
- High breakdown voltage VCEO = -250 V
- Complementary to 2ST5949
- Typical ft = 25 MHz
- Fully characterized at 125 oC
应用领域
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内部原理图
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2ST2121 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| 2ST2121 |
NRND |
|
1000 |
TO-3 |
Tube |
|
2ST2121 |
DATASHEET
| 描述 |
版本 |
大小 |
| 2ST2121 :DS5477: High power PNP epitaxial planar bipolar transistor |
5 |
134KB |
