2STA1695 High power PNP epitaxial planar bipolar transistor
This device is an PNP transistor manufactured using BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor exhibits good gain linearity behavior. Recommended for 70 W to 100 W high fidelity audio frequency amplifier output stages
技术特性
- High breakdown voltage VCEO = -140 V
- Complementary to 2STC4468
- Typical ft = 20 MHz
- Fully characterized at 125 °C
应用领域
|
内部原理图
 |
2STA1695 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| 2STA1695 |
NRND |
|
1000 |
TO-3P |
Tube |
|
2STA1695 |
DATASHEET
| 描述 |
版本 |
大小 |
| 2STA1695 :DS5325: High power PNP epitaxial planar bipolar transistor |
3 |
229KB |
