2STA1962 High power PNP epitaxial planar bipolar transistor
This device is a PNP transistor manufactured using new BiT-LA (Bipolar Transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour
技术特性
- High breakdown voltage VCEO > -230V
- Complementary to 2STC5242
- Fast-switching speed
- Typical fT= 30MHz
应用领域
|
内部原理图
 |
2STA1962 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| 2STA1962 |
Active |
|
1000 |
TO-3P |
Tube |
|
2STA1962 |
DATASHEET
| 描述 |
版本 |
大小 |
| 2STA1962 :DS5494: High power PNP epitaxial planar bipolar transistor |
3 |
179KB |
