2STC5200 High power NPN epitaxial planar bipolar transistor
This device is a NPN transistor manufactured using new BiT-LA (Bipolar Transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour
技术特性
- High breakdown voltage VCEO> 230V
- Complementary to 2STA1943
- Fast-switching speed
- Typical fT= 30MHz
应用领域
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内部原理图
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2STC5200 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| 2STC5200 |
Active |
|
1000 |
TO-264 |
Tube |
|
2STC5200 |
DATASHEET
| 描述 |
版本 |
大小 |
| 2STC5200 :High power NPN epitaxial planar bipolar transistor |
2 |
183KB |
