2STF2280 Transistors, Power Bipolar, Low Voltage - High Performance
The device is a PNP transistor manufactured using new "PB-HCD" (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage
技术特性
- Low collector-emitter saturation voltage
- High current gain characteristic
- Fast switching speed
应用领域
- DC-DC converter, voltage regulation
- General purpose switching equipment
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内部原理图
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2STF2280 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| 2STF2280 |
NRND |
|
1000 |
SOT-89 |
Tape And Reel |
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2STF2280 |
DATASHEET
| 描述 |
版本 |
大小 |
| 2STF2280 :Low voltage high performance PNP power transistor |
1 |
99KB |
