2STR1160 Low voltage fast-switching NPN power transistor
The device in a NPN transistor manufactured using new "PB-HCD" (Power Bipolar High Current Density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.
The complementary PNP is the 2STR2160
技术特性
- Very low collector-emitter saturation voltage
- High current gain characteristic
- Fast switching speed
- Miniature SOT-23 plastic package for surface mounting circuits
应用领域
- LED
- Battery charger
- Motor and relay driver
- Voltage regulation
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内部原理图
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2STR1160 订购信息
| 订购型号 |
产品状态 |
美金价格 |
数量 |
封装 |
包装形式 |
温度范围 |
材料声明 |
| 2STR1160 |
Active |
|
1000 |
SOT23 |
Tape And Reel |
|
2STR1160 |
DATASHEET
| 描述 |
版本 |
大小 |
| 2STR1160 :Low voltage fast-switching NPN power transistor |
1 |
249KB |
