2STW4468 High power NPN epitaxial planar bipolar transistor

The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour.

Recommended for 70 W to 100 W high fidelity audio frequency amplifier output stage

技术特性
  • High breakdown voltage VCEO = 140 V
  • Complementary to 2STW1695
  • Fast-switching speed
  • Typical ft = 20 MHz
  • Fully characterized at 125 oC
应用领域
  • Audio power amplifier
内部原理图
2STW4468 功能框图
2STW4468 订购信息
订购型号 产品状态 美金价格 数量 封装 包装形式 温度范围 材料声明
2STW4468 Active   1000 TO-247 Tube   2STW4468
DATASHEET
描述 版本 大小
2STW4468 :DS4979: High power NPN epitaxial planar bipolar transistor 4 160KB