The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage
技术特性
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订购型号 | 产品状态 | 美金价格 | 数量 | 封装 | 包装形式 | 温度范围 | 材料声明 |
BD179 | Active | 1000 | SOT-32 | Tube | BD179 |
描述 | 版本 | 大小 |
BD179 :NPN power transistor | 4 | 252KB |